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- Title
Threshold-voltage-difference-based CMOS voltage reference derived from basic current bias generator with 4.3 ppm/°C temperature coefficient.
- Authors
Cai Yongda; Zou Zhige; Wang Zhen; Lei Jianming
- Abstract
A threshold-voltage-difference-based CMOS voltage reference topology derived from the basic current bias generator is proposed. The implementation in the GSMC 0.18 μm process demonstrated that a precise voltage of 516.3 mV can be generated with a minimal temperature coefficient of 4.3 ppm/°C. The reference consumes a current of 1.9 μA with a minimum supply voltage of 1.4 V. The line regulation is 0.075%/V at room temperature. It only occupies 0.013 mm2 without any area optimisations because of its simple structure. Also, due to its special compound structure, the circuit can generate both a stable voltage and a relatively temperature-independent current.
- Subjects
THRESHOLD voltage; COMPLEMENTARY metal oxide semiconductors; ELECTRIC currents; ELECTRIC fields; DISPLACEMENT currents (Electric)
- Publication
Electronics Letters (Wiley-Blackwell), 2014, Vol 50, Issue 7, p1
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2013.4064