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- Title
Large Magnetoresistance in an Inhomogeneous Magnetic Semiconductor.
- Authors
Solin, N. I.; Naumov, S. V.
- Abstract
A new way of attaining large values of magnetoresistance in a magnetic semiconductor was investigated. The mechanism of magnetoresistance is based on the formation of a space charge, a depletion layer, and a contact potential U[sub c] at the interface between two semiconductors with different Fermi levels E[sub n][sup F] and E[sub p][sup f] and on the dependence of U[sub c], the electrical resistivity, and the size of the depletion layer in the magnetic semiconductor on the magnetic field strength. The model proposed was experimentally verified using a microstructure consisting of an HgCr[sub 2]Se[sub 4]n-layer with a thickness of up to several tens of microns deposited on the surface of a bulk p-HgCr[sub 2]Se[sub 4] single crystal. Depending on microstructure parameters, a sharp (up to ∼30 times) rise in the current flowing through the n-layer was observed in the region of Curie temperature upon switching on a magnetic field (H∼15 kOe). © 2000 MAIK “Nauka / Interperiodica”.
- Subjects
MAGNETORESISTANCE; MAGNETIC semiconductors
- Publication
JETP Letters, 2000, Vol 72, Issue 12, p612
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.1351201