We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Skin effect and response of semiconductor barrier structures.
- Authors
Feıginov, M. N.; Volkov, V. A.
- Abstract
The problem of the skin effect in a finite-width barrier structure of the type conductor (metal or semiconductor) — barrier (specifically, tunneling) — conductor is solved. It is shown that the excitation of special “barrier” plasma polaritons (BPPs), which are localized in the barrier and the near-barrier region and possess a 2D spectrum, is possible in this regime. An analytical relation between the BPP spectrum and the linear dynamical impedance of the structure as well as its rectifying characteristics is found. The excitation of BPPs greatly increases the nonlinear response of the structure. It is shown that the linear and nonlinear response of the typical semiconductor tunneling structures in the THz frequency range is determined by the excitation of BPPs. © 1999 American Institute of Physics.
- Subjects
SKIN effect; SEMICONDUCTORS
- Publication
JETP Letters, 1999, Vol 69, Issue 4, p336
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.568033