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- Title
LOW STRESS TaN THIN FILM DEVELOPMENT FOR MEMS/SENSOR ELECTRODE APPLICATION.
- Authors
XIAOXU KANG; QINGYUN ZUO; CHAO YUAN; SHOUMIAN CHEN; YUHANG ZHAO
- Abstract
TaN\Ta is the excellent material against copper diffusion, and is widely used as Cu diffusion barrier in Complementary Metal-Oxide-Semiconductor (CMOS) Back End of Line (Cu-BEOL) process. Due to its good electrical and thermal property, TaN is also evaluated as electrode material for Micro-Electro-Mechanical Systems (MEMS)/sensor application. In this work, CMOS compatible MEMS based bolometer process with post-interconnect CMOS-MEMS single chip integration scheme was developed on 200 mm standard CMOS Cu BEOL, and TaN thin film was used as key electrode material in micro-bridge structure. The micro-bridge structure, with sensing resistor on surface of the micro-bridge, forms a resonant cavity for IR absorption. There are only several layers of thin film on the micro-bridge, and stress of the electrode layer play very important role to determine the performance of the micro-bridge. Additionally sheet resistance of TaN electrode should be controlled at around 377 Ohm/SQ to match the free space impedance, which is much higher than CMOS baseline process. Low stress and high resistivity TaN film was developed with thickness of 200 Å and compressive stress of about 900 MPa as best condition. From the electrical and physical data, the optimized TaN film process can well match this application.
- Subjects
TANTALUM compounds; METALLIC thin films; MICROELECTROMECHANICAL systems; ELECTRODES; COPPER diffusion rate; COMPLEMENTARY metal oxide semiconductors
- Publication
Journal of Circuits, Systems & Computers, 2013, Vol 22, Issue 9, p1
- ISSN
0218-1266
- Publication type
Article
- DOI
10.1142/S0218126613400173