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- Title
Lateral Schottky GaN Rectifiers Formed by Si<sup>+</sup> Ion Implantation.
- Authors
Irokawa, Y.; Jihyun Kim; Ren, F.; Baik, K. H.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.
- Abstract
Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30--300 sec) and temperature (1,000--1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 x 1018 cm-3 for a moderate Si+ ion dose of ∼2 x 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V.K for reverse breakdown voltage.
- Subjects
IONS; DIODES; TEMPERATURE; NEGATIVE temperature; VOLTAGE regulators
- Publication
Journal of Electronic Materials, 2004, Vol 33, Issue 5, p426
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-004-0196-5