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- Title
Effect of diffusion doping-induced defects on shunt resistance affecting Si-nanowire solar cell performance.
- Authors
Muduli, Sakti Prasanna; Kale, Paresh
- Abstract
Si nanowires (SiNWs) are preferred over bulk Si for photovoltaics owing to near-zero optical reflection and band gap tunability. However, the cost-effective fabrication of phosphorus-doped SiNWs poses challenges. The work employs metal-assisted chemical etching for SiNW array fabrication and spin-on doping with P2O5 as the phosphorus source to form an n-type emitter. The P2O5 concentration in the phosphosilicate glass (PSG) sol–gel controls the phosphorus-doping level on the SiNWs. Morphological analysis detects a marginal reduction in the SiNW lengths with P2O5 concentration after PSG layer removal. The optical studies show a significant decrease of the average reflectance to 3.99% and a band gap of 1.59 eV for the optimized doping density (fabricated with a P2O5 concentration of 5 mM), leading to a 34.5% improvement in the ultimate efficiency. Raman asymmetric ratio and photoluminescence emission spectra elucidate the possible surface and bulk defects causing the recombination. The resistivity of the optimized phosphorus-doped SiNW array decreases to 3.37 Ω cm due to a significant increase in the donner concentration. The study compares various methods to estimate the internal cell resistances from the illuminated current–voltage measurement and considers the single-diode model accurate. The power conversion efficiency and the fill factor of the optimized solar cell are 4.09% and 43.4%, respectively, limited by the increased series resistance and decreased shunt resistance.
- Publication
Journal of Materials Science: Materials in Electronics, 2024, Vol 35, Issue 6, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-024-12190-7