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- Title
Mg<sub>2</sub>Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications.
- Authors
Dassi, Minaxi; Madan, Jaya; Pandey, Rahul; Sharma, Rajnish
- Abstract
Challenges faced in fabrication of the tunnel field effect transistor (TFET) device like random dopant fluctuation (RDF) take away the complete sheen achieved from its numerous advantages like low subthreshold swing and high ION/IOFF ratio. Through conduct of a large number of numerical simulations in a very systematic manner, this paper addresses to resolve the issue of RDF in TFET by applying the concept of charge plasma to Mg2Si source double gate tunnel field effect transistor (MSH-DG-TFET) and proposes a dopingless (DL) MSH-DG-TFET. Proposed DL-MSH-DG-TFET structure is relatively inexpensive for realization and provides a window of opportunity by possibly doing away with relatively expensive and tedious processes of doping (ion implantation) and high-temperature annealing. Further, optimization of the proposed DL-MSH-DG-TFET is done by optimizing the work function values of gate metal (4.2 eV), source electrode (5.1 eV) and drain electrode (3.9 eV). Gate oxide thickness value is optimized at 3 nm to achieve the best device performance in terms of switching ratio and threshold voltage. Analog/electrical examination of the device reveals the successful implementation of DL-MSH-DG-TFET in low power applications.
- Subjects
FIELD-effect transistors; QUANTUM tunneling; INDIUM gallium zinc oxide; ION implantation; HETEROJUNCTIONS; THRESHOLD voltage
- Publication
Journal of Materials Science: Materials in Electronics, 2022, Vol 33, Issue 9, p6816
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-022-07860-3