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- Title
Quasielastic scattering of light by a photoexcited electron–hole plasma induced in a GaAs layer in the presence of InAs quantum dots.
- Authors
Baıramov, B. Kh.; Voıtenko, V. A.; Zakharchenya, B. P.; Toporov, V. V.; Henini, M.; Kent, A. J.
- Abstract
The development of a method for registering quasielastic electronic light scattering spectra in the near-IR region, which makes it possible to detect light scattering by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of a self-organized ensemble of InAs quantum dots, is reported. A substantial resonance intensification of such scattering, two orders of magnitude greater than the values established for the bulk material, is observed, and the main mechanism of such scattering is determined.
- Subjects
GALLIUM arsenide; INDIUM compounds; QUANTUM dots; QUASIELASTIC light scattering
- Publication
JETP Letters, 1998, Vol 67, Issue 11, p972
- ISSN
0021-3640
- Publication type
Article