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- Title
Nanometer-thin ALD-Al<sub>2</sub>O<sub>3</sub> for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE.
- Authors
Banal, Ryan G.; Imura, Masataka; Tsuya, Daiju; Iwai, Hideo; Koide, Yasuo
- Abstract
The epitaxial quality of AlN grown on sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) is improved upon the incorporation of nanometer-thin amorphous Al2O3 interlayer by atomic layer deposition (ALD). The critical ALD-Al2O3 thickness is determined to be around 1 nm, where the AlN exhibits a parallel step-and-terrace surface morphology. However, with increasing ALD-Al2O3 thickness, the surface changes to meandering step-and-terrace morphology due to the formation of surface defects in the ALD-Al2O3, leading to growth spiral in AlN. The surface defects are attributed to the transformation of amorphous Al2O3 into crystalline structure. The same tendency in the structural quality is also observed by XRD measurements, where the ω-scan of symmetric (0002) and asymmetric
- Subjects
ALUMINUM oxide; ALUMINUM nitride films; ATOMIC layer deposition; SAPPHIRES; VAPOR phase epitaxial growth; SURFACE defects; NANOSTRUCTURED materials analysis
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2017, Vol 214, Issue 2, pn/a
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600727