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- Title
Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures.
- Authors
Barkissy, D.; Nafidi, A.; Boutramine, A.; Charifi, H.; Elanique, A.; Massaq, M.
- Abstract
We report here the electronic band structures of symmetric type I GaAs ( $$d_{1}= 2.83$$ nm)/AlAs ( $$d_{2}= 2.83$$ nm) superlattice as a function of the well thickness $$d_{1}$$ and the effect of the valence band offset $$\Lambda $$ , the ratio $$d_{2}$$ / $$d_{1}$$ , and the temperature on the band gap energy, performed in the envelop function formalism. These results are compared and discussed with the experimental measurements reported in the literature.
- Subjects
ELECTRIC properties of nanostructured materials; SUPERLATTICES; NEAR infrared radiation; LOW temperatures; ELECTRONIC band structure; VALENCE bands
- Publication
Journal of Low Temperature Physics, 2016, Vol 182, Issue 5/6, p185
- ISSN
0022-2291
- Publication type
Article
- DOI
10.1007/s10909-015-1437-0