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- Title
Reduction of leakage current at the SiN<sub>x</sub>/GaN interface in GaN Schottky diodes.
- Authors
Kolli, Sowmya; Sunkara, Mahendra; Alphenaar, Bruce
- Abstract
The breakdown characteristics for a GaN wrapround field plate diode are compared to those of a planar diode and a mesa diode to determine the improvement due to the field plate geometry. Mesa diodes exhibit a higher breakdown voltage compared to planar diodes, in agreement with simulation models. Wraparound field plate diodes, however, show high leakage current resulting in lower breakdown values than predicted. It is found that the extra leakage is caused by damage from the plasma enhanced chemical vapor deposition of the SiNx used to form the field plate. To mitigate the leakage current, atomic layer deposition was used to put down a protective Al2O3 prior to SiNx deposition. This significantly reduced the leakage current and raised the breakdown voltage of the wraparound Schottky diodes.
- Subjects
STRAY currents; ELECTRIC properties of gallium nitride; SILICON nitride; SCHOTTKY barrier diodes; SEMICONDUCTOR diodes; METAL insulator semiconductors; CHEMICAL vapor deposition
- Publication
Journal of Materials Science: Materials in Electronics, 2018, Vol 29, Issue 22, p19353
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-018-0064-3