We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
- Authors
Bessolov, V. N.; Davydov, V. Yu.; Zhilyaev, Yu. V.; Konenkova, E. V.; Mosina, G. N.; Raevskiǐ, S. D.; Rodin, S. N.; Sharofidinov, Sh.; Shcheglov, M. P.; Park, Hee Seok; Koike, Masayoshi
- Abstract
Oriented GaN layers with a thickness of about 10 μm have been grown by hydride–chloride vapor-phase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth (FWHM) of the X-ray rocking curve of ωθ = 3– 4 mrad. The level of residual mechanical stresses in AlN buffer layers decreases with increasing temperature of epitaxial growth. The growth at 1080°C is accompanied by virtually complete relaxation of stresses caused by the lattice mismatch between AlN and Si. © 2005 Pleiades Publishing, Inc.
- Subjects
RADIOGRAPHIC films; HYDRIDE electrodes; MOLECULAR beam epitaxy; CRYSTAL growth; THIN films; CHLORIDES; SILICON; PLEIADES Publishing Inc.
- Publication
Technical Physics Letters, 2005, Vol 31, Issue 11, p915
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.2136951