We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application.
- Authors
Yun, Seunghyun; Oh, Jeongmin; Kang, Seokjung; Kim, Yoon; Kim, Jang Hyun; Kim, Garam; Kim, Sangwan
- Abstract
In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET.
- Subjects
TUNNEL field-effect transistors; ELECTRIC field effects; EMPLOYEE motivation; COMPUTER-aided design
- Publication
Micromachines, 2019, Vol 10, Issue 11, p760
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi10110760