We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
The Spatial Distribution of Channeled Ions and Ranges of Hydrogen Isotopes in Crystalline Silicon and Tungsten.
- Authors
Meluzova, D. S.; Babenko, P. Yu.; Shergin, A. P.; Zinoviev, A. N.
- Abstract
The ranges of H and D ions in crystalline Si and W have been calculated. It is shown that the depth distribution of the ranges is divided into two components with an increase in the ion energy: one is related to the atomic scattering in surface layers, while the other characterizes particles captured into the channel. A new phenomenon has been observed: a stable spatial structure of the beam component captured into the channel is formed when particles propagate for a short distance. At ion deceleration, the particles pass to neighboring channels and the spatial structure of the beam of particles captured into the channel breaks near the stop point. A schematic of the experiment is proposed, which makes it possible to relate the obtained spatial distribution and the angular distributions of the escaped particles.
- Subjects
HYDROGEN isotopes; SILICON isotopes; HYDROGEN ions; SURFACE scattering; DEUTERIUM; ATOMIC scattering; TUNGSTEN
- Publication
Technical Physics Letters, 2020, Vol 46, Issue 3, p235
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785020030104