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- Title
The optical and electrical properties of F doped ZnO thin film by different post-annealing temperatures.
- Authors
Lin, Chih Yun; Chen, Tao-Hsing; Tu, Sheng-Lung; Shen, Yun-Hwei; Huang, Jia-Ting
- Abstract
The optical and electronic properties of thin films of FZO (F:ZnO = 2:98 at.%) after annealing at different temperature was investigated. The films used in this study were prepared by Radio Frequency Magnetron Sputtering (RF-sputtering) on Corning glass substrates. The results show that the FZO transparent conductive films made at a sputtering power of 50 W, in an Argon atmosphere 15 sccm, after 90 min of deposition at a pressure of 6 mtorr, annealed at 400 °C had the lowest electrical resistivity, and an average transmittance of 85.16% at 400 nm. XRD analysis revealed a peak of growth in the (002) direction which rose with annealing temperature indicating improved crystallinity.
- Subjects
ANNEALING of glass; RADIO frequency; MAGNETRONS; MAGNETRON sputtering; SUBSTRATES (Materials science); ARGON
- Publication
Optical & Quantum Electronics, 2018, Vol 50, Issue 4, p1
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-018-1430-3