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- Title
Optical properties of BiTeI semiconductor with a strong Rashba spin-orbit interaction.
- Authors
Makhnev, A.; Nomerovannaya, L.; Kuznetsova, T.; Tereshchenko, O.; Kokh, K.
- Abstract
The optical properties of BiTeI crystals in the range of 0.09-5.0 eV are studied by optical spectral ellipsometry. The fundamental characteristics of the electronic structure are determined. The optical gap is estimated to be E = 0.33 eV. The plasma frequency of conduction electrons is determined to be ω = 0.13 eV. A fine structure of low-energy electronic transitions is found in the range 0.15-0.44 eV between the plasma edge and the intense interband absorption threshold. The singularities at 0.2 and 0.3 eV are related to the transitions between bulk conduction bands split by a strong Rashba spin-orbit interaction.
- Subjects
OPTICAL properties of semiconductors; SPIN-orbit interactions; RASHBA effect; ELLIPSOMETRY; ELECTRONIC structure; PLASMA frequencies; CONDUCTION electrons
- Publication
Optics & Spectroscopy, 2014, Vol 117, Issue 5, p764
- ISSN
0030-400X
- Publication type
Article
- DOI
10.1134/S0030400X14110125