We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors.
- Authors
Zhang, Jin-Feng; Chen, Wan-Jiao; Ren, Ze-Yang; Su, Kai; Yang, Peng-Zhi; Hu, Zhuang-Zhuang; Zhang, Jin-Cheng; Hao, Yue
- Abstract
Hydrogen‐terminated diamond (H‐diamond) metal–oxide–semiconductor field‐effect transistors (MOSFETs) are fabricated, and a partial C–O channel is formed by UV‐ozone treatment of the H‐diamond surface to help realize normally off devices. The first parameterization of the vertical‐field (Feff)‐dependent effective hole mobility (μeff) in a normally off diamond FET is conducted using the fabricated MOSFETs with a gate length of 40 μm fat field‐effect transistors (FATFET). The FATFET with a threshold voltage of −0.69 V shows a low on‐resistance of 475.1 Ω mm and a record high drain current of −3.8 mA mm−1 for normally off H‐diamond MOSFETs with gate lengths over 20 μm. The extracted μeff ranges from 127 cm2(V s)−1 (at VGS = −4.5 V) to 276 cm2(V s)−1 (at VGS = −1.5 V). Both μeff versus Feff and μeff versus VGS relations can be well fitted by the semiempirical formulas used for silicon counterparts. The resulting low‐field mobility without vertical‐field degradation for the two relations is 376 cm2(V s)−1 and 418 cm2(V s)−1, respectively. The origin of this difference is also given.
- Subjects
METAL oxide semiconductor field-effect transistors; FIELD-effect transistors; HOLE mobility; INDIUM gallium zinc oxide; DIAMONDS; THRESHOLD voltage; SURFACE preparation
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2020, Vol 217, Issue 1, pN.PAG
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201900462