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- Title
Brief Review of Surface Passivation on III-V Semiconductor.
- Authors
Zhou, Lu; Bo, Baoxue; Yan, Xingzhen; Wang, Chao; Chi, Yaodan; Yang, Xiaotian
- Abstract
The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field. The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to improve the surface and interface quality, which cover sulfur-passivation, plasmas-passivation, ultrathin film deposition, and so on. In this paper, recent research of the surface passivation on III-V semiconductors was reviewed and compared. It was shown that several passivation methods can lead to a perfectly clean surface, but only a few methods can be considered for actual device integration due to their effectiveness and simplicity.
- Subjects
III-V semiconductors; INTEGRATED circuit passivation; ELECTRON mobility measurement
- Publication
Crystals (2073-4352), 2018, Vol 8, Issue 5, p226
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst8050226