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- Title
Selective hydrobromination of metallurgical-grade silicon in a flow reactor system.
- Authors
Tomono, Kazuaki; Okamura, Yuki; Furuya, Hirotoshi; Satoh, Miyu; Miyamoto, Seiji; Komatsu, Ryuichi; Nakayama, Masaharu
- Abstract
Reactions of metallurgical-grade silicon (MG-Si) with gaseous hydrogen bromide (HBr) has been monitored by means of online gas chromatography in a flow reactor system. The formation of tri-bromosilane started to occur at 380 °C, accompanied by the consumption of HBr. The conversion of HBr into bromosilanes increased with an increase in reaction temperature and reached a maximum at 440 °C. An increase of the HBr concentration in a HBr-N mixed gas led to an increase in the consumption of MG-Si, while it reduced the selectivity of the tri-bromosilane formation. An increase in total flow rate of the reaction gas caused a dramatic decrease in the HBr conversion and enhanced the selectivity of the tri-bromosilane formation. The rate constant for overall bromination reaction at 400 °C was measured to be 0.46 s. Concentrations of impurities in the product were much less than those in MG-Si. Moreover, kerf loss silicon was subjected to the bromination reaction under the optimized conditions.
- Subjects
METALLURGIC chemistry; SILICON; HYDROGEN bromide; GAS chromatography; SILANE compounds; GASES; BROMINATION; CHEMICAL equations
- Publication
Journal of Materials Science, 2012, Vol 47, Issue 7, p3227
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1007/s10853-011-6160-x