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- Title
Resonant tunnelling diode photodetector operating at near-infrared wavelengths with high responsivity.
- Authors
Yu Dong; Jianxing Xu; Guanglong Wang; Haiqiao Ni; Kangming Pei; Jianhui Chen; Fengqi Gao; Baochen Li; Zhichuan Niu
- Abstract
Resonant tunnelling diode photodetectors with a 600 nm In0.53Ga0.47As absorption layer were fabricated by molecular beam epitaxy. The current–voltage characteristics of devices with different mesa diameters were tested and the negative differential resistance was observed in all devices. The responsivity of the detector was measured to be 4.19 × 105 A/W at 77 K and 1.92 × 104 A/W at room temperature under incident light with a power of 3.1 nW.
- Subjects
RESONANT tunneling; PHOTODETECTORS; NEAR infrared radiation; WAVELENGTHS; RESPONSIVITY (Detectors)
- Publication
Electronics Letters (Wiley-Blackwell), 2015, Vol 51, Issue 17, p1355
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2015.1041