We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Impact of the ridge etching‐depth on GaSb‐based laser diodes.
- Authors
Monge‐Bartolome, Laura; Cerutti, Laurent; Tournié, Eric
- Abstract
We have fabricated from the same epitaxial wafer series of GaSb‐based Fabry–Pérot laser diodes emitting near 2.3 μm with different ridge etching‐depths. The analysis of the device performances allows quantifying the detrimental impact of deep ridge etching. The threshold current density is increased, whereas the external differential quantum efficiency is reduced, due to a reduced internal quantum efficiency and higher optical losses.
- Subjects
SEMICONDUCTOR wafers; FABRY-Perot lasers; SEMICONDUCTOR lasers; EPITAXIAL layers; OPTICAL losses
- Publication
Electronics Letters (Wiley-Blackwell), 2022, Vol 58, Issue 4, p162
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/ell2.12392