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- Title
Self-assembled Low Density Quantum Dot and Quantum Dot-in-nanowire Structures for Quantum Photonics.
- Authors
Guo-Wei Zha; Zhi-Chuan Niu; Ying Yu; Xiang-Jun Shang; Jian-Xing Xu; Si-Hang Wei; Li-Juan Wang; Hai-Qiao Ni
- Abstract
Self-assembled III-V quantum dots (QDs) are of particular attractive as solid quantum light emitters owing to their stability, narrow spectral linewidth, and short radiative lifetime. Meanwhile, semiconductor nanowires (NWs) have appeared as promising building blocks for future nanoscale electronic and photonic devices owing to their high crystalline quality and integration possibilities. To fully explore the potential of NW systems, many investigators have turned to the synthesis of artificial nanostructures in NW systems, such as quantum dots (QDs)and nanoclusters, to generate fascinating multifunctional properties. Single nanostructures embedded within NWs represent one of the most promising technologies for applications in quantum photonics. With NWs, a nanostructure can be constructed by inserting a slice of lower gap semiconductor along the growth direction such as CdSe/ZnSe, In(Ga)As/GaAs, GaAsP/GaAs, InAsP/InP and GaAs/AlGaAs systems, or via self-assembled epitaxy on the faceted NWs in the radial direction, utilizing the different surface energies, partly originating from different crystal lattices of hybrid materials, as a driving force. Herein, we report our latest work on self-assembled low density quantum dot and quantum dot-in-nanowire structures for quantum photonics, which might pave the way for the fabrication of highly efficient single-photon sources (SPSs) and novel quantum optics experiments.
- Subjects
QUANTUM dots; LIGHT emitting diodes; SEMICONDUCTOR research; OPTICAL properties of cadmium selenide; INDIUM gallium arsenide; GALLIUM arsenide
- Publication
PIERS Proceedings, 2014, p315
- ISSN
1559-9450
- Publication type
Article