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- Title
P-26: High Capacity Memory using Oxide Based Schottky Diode and Unipolar Resistive Array.
- Authors
Fan, Yang‐Shun; Chang, Chih‐Hsiang; Zheng, Guang‐Ting; Chang, Che‐Chia; Liu, Po‐Tsun
- Abstract
The Al-doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward-bias current of proposed AZTO-based Schottky diode by post-deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti-crosstalk properties of the AZTO-based 1D1R devices.
- Subjects
ZINC tin oxide; SCHOTTKY barrier diodes; TIN compounds; ZINC salts; SEMICONDUCTOR diodes; SCHOTTKY diode mixers
- Publication
SID Symposium Digest of Technical Papers, 2015, Vol 46, Issue 1, p1213
- ISSN
0097-966X
- Publication type
Article
- DOI
10.1002/sdtp.10063