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- Title
Electronic properties and band offsets in InP(1−x−y)BixNy.
- Authors
Wang, Kailin; Liang, Dan; Li, Yang; Wang, Shumin; Lei, Ming; Li, Shanjun; Lu, Pengfei
- Abstract
Electronic band structures of InP (1 − x − y) Bi x N y have been theoretically studied by using Conduction Band Anticrossing (CBAC) model and Valence Band Anticrossing model (VBAC) in conjugation with k ⋅ p method. This mathematical model's manifestation is a 16 band Hamiltonian matrix. Our results reveal that the addition of Bi and N to InP causes substantial reduction of band gap, and the conduction band offset is greater than valence band offset. It can provide better electronic confinement and improve the temperature-insensitive characteristics for optoelectronic devices. Material compositions and band gap under various strain conditions have also been added in our calculation. By adjusting the concentration of Bi and N, we obtained a strong control of conduction band edge and valence band edge, which increases the flexibility of design InPBiN/InP structures.
- Subjects
ELECTRONIC band structure; CONDUCTION bands; VALENCE bands; BAND gaps; OPTOELECTRONIC devices
- Publication
Modern Physics Letters B, 2019, Vol 33, Issue 6, pN.PAG
- ISSN
0217-9849
- Publication type
Article
- DOI
10.1142/S0217984919500581