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- Title
Chemical interactions in the layered system BCN/Ni(Cu)/Si, produced by CVD at high temperature.
- Authors
Hoffmann, P.; Kosinova, M.; Flege, S.; Baake, O.; Pollakowski, B.; Trunova, V.; Klein, A.; Beckhoff, B.; Kuznetsov, F.; Ensinger, W.
- Abstract
Layered samples Si(100)/C/Ni/BCN and Si(100)/C/Cu/BCN were produced by physical vapor deposition of a metal (Ni, Cu, resp.) and low-pressure chemical vapor deposition of the boron carbonitride on a Si(100) substrate. Between the Si and the Ni (Cu) and on the surface of the Ni (Cu) layer, thin carbon layers were deposited, as a diffusion barrier or as a protection against oxidation, respectively. Afterwards, the surface carbon layer was removed. As precursor, trimethylamine borane and, as an auxiliary gas, H and NH were used, respectively. The chemical compositions of the layers and of the interfaces in between were characterized by total-reflection X-ray fluorescence spectrometry combined with near-edge X-ray absorption fine-structure spectroscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The application of H yielded the BCN compound whereas the use of NH led to a mixture of h-BN and graphitic carbon. At the BCN/metal interface, metal borides could be identified. At the relatively high synthesis temperature of 700 °C, broad regions of Cu or Ni and Si were observed between the metal layer and the substrate Si.
- Subjects
PHYSICAL vapor deposition; CHEMICAL vapor deposition; BORON carbides; X-ray photoelectron spectroscopy; SECONDARY ion mass spectrometry
- Publication
Analytical & Bioanalytical Chemistry, 2012, Vol 404, Issue 2, p479
- ISSN
1618-2642
- Publication type
Article
- DOI
10.1007/s00216-012-6177-2