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- Title
Effective role of the SnO<sub>2</sub> cap layer thickness in improving the structural morphology, optical properties and enhancing the photovoltaic performance of fabricated n-SnO<sub>2</sub>/n-CdS/p-Si solar cells.
- Authors
Qasem, Ammar; Alraddadi, Shoroog; Al-Amery, Eshraq; Shaaban, E. R.; Mahmoud, A. Z.
- Abstract
In the current framework, the n-SnO2/n-CdS/p-Si heterostructure was fabricated at different tin dioxide (SnO2) thicknesses (d = 30, 60, 90, 120, 150, and 180 nm). In this device, nickel (Ni) and platinum (Pt) strips were used as back and front contact electrodes, respectively. The structural and optical properties of the SnO2 cap layers were studied. Using a frequency of 10 MHz, a typical dark capacitance–voltage (C–V) characteristic of the fabticated heterostructure was measured to determine the electronic parameters. In order to understand the behavior of the fabricated device under dark conditions, the current density–voltage (J–V) characteristics were analyzed. The measurements showed a significant rectifying behavior, demonstrating the junction's good rectification characteristic. The devices' performance parameters, including open-circuit voltage (Voc), short-circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE), were all discovered to be affected by the cap layer's thickness when subjected to AM1.5 illumination. In this study, the higher thickness window layer had a power conversion efficiency of 14.25%. Remarkably, the addition of a cadmium sulfide buffer layer, and changing the thickness of the SnO2 cap layer were critical in improving the photovoltaic properties, with the suitability of the last SnO2 cap layer confirmed due to its good structural, optical, quantum efficiency η , spectral photoresponsivity ℜ and photovoltaic properties.
- Subjects
PHOTOVOLTAIC power systems; SOLAR cells; OPTICAL properties; STANNIC oxide; BUFFER layers; CADMIUM sulfide
- Publication
Optical & Quantum Electronics, 2023, Vol 55, Issue 13, p1
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-023-05264-z