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- Title
Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures.
- Authors
Baranov, A.; Gudovskikh, A.; Nikitina, E.; Egorov, A.
- Abstract
It is shown that photovoltaic converters (PVCs) can be based on GaPNAs/GaP heterostructures, which are of considerable interest for the creation of multijunction solar cells on silicon substrates. It is established that p-i-n structures with undoped GaPNAs layer provide for a more effective separation of charge carriers, which makes it possible to obtain a greater short-circuit current than that in p-n structures with an n-type base. A specific feature in spectral characteristics of the proposed PVCs is the presence of two peaks in the spectra of quantum efficiency, which is related to a complicated band structure of GaPNAs.
- Subjects
PHOTOELECTRICITY; SOLAR cells; HETEROSTRUCTURES; GALLIUM; SILICON; SUBSTRATES (Materials science); PIN diodes; SEPARATION (Technology)
- Publication
Technical Physics Letters, 2013, Vol 39, Issue 12, p1117
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785013120171