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- Title
The Effect of Interlayer Thickness on Frequency Dependent Electrical Characteristics of Al/p-Si Schottky Barrier Diodes with Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Interlayer.
- Authors
Yıldırım, Mert
- Abstract
Lead-free bismuth titanate (Bi4Ti3O12, i.e. BiT) attracts attention of researchers due to its peculiar properties which make it a suitable material for various electronic device applications. Therefore, this study focuses on thickness dependent electrical characteristics of Schottky barrier diodes having BiT interlayer. Frequency dependent admittance measurements revealed electrical characteristics of the Schottky barrier diodes are affected by BiT interlayer thickness. An increase in capacitance and conductance is observed in a way that the intensity is higher at lower frequencies due to interface states. Also, peaks are observed in capacitance-voltage (C-V) and conductance-voltage (G/ω-V) plots and existence of these peaks was explained by the effects caused by series resistance and interface states. Series resistance was found to decrease with increasing BiT interlayer thickness whereas interface states increased. Moreover, main electrical parameters of Schottky barrier diodes; such as doping concentration of acceptor atoms, built-in voltage, image-force barrier lowering and barrier height, were extracted from C-2-V plots and it was found that thickness of BiT interlayer alters these parameters.
- Publication
Karaelmas Science & Engineering Journal / Karaelmas Fen ve Mühendislik Dergisi, 2016, Vol 6, Issue 2, p406
- ISSN
2146-4987
- Publication type
Article