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- Title
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells.
- Authors
Gudina, S.; Neverov, V.; Ilchenko, E.; Bogolubskii, A.; Harus, G.; Shelushinina, N.; Podgornykh, S.; Yakunin, M.; Mikhailov, N.; Dvoretsky, S.
- Abstract
The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.
- Subjects
ENERGY-band theory of solids; EFFECTIVE mass (Physics); QUANTUM electrodynamics; QUANTUM wells; QUANTUM Hall effect
- Publication
Semiconductors, 2018, Vol 52, Issue 1, p12
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618010098