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- Title
Growth of porous InS films and their photoelectrochemical properties.
- Authors
Su, Feng-Yun; Zhang, Wei-De; Liu, Yi-Ye; Huang, Rong-Huan; Yu, Yu-Xiang
- Abstract
Flower-like InS porous films composed of connected ultra-thin curved nanoflakes were prepared on fluorine-doped tin oxide (FTO) substrate by a solvothermal process. The structure and morphology of the InS films were characterized by X-ray diffraction and scanning electron microscopy. The optical properties of the InS films were characterized by UV-vis absorption. The obtained InS films showed n-type semiconductive characteristics and exhibited high anodic photocurrent under visible light illumination. By properly monitoring the experimental conditions, we find that the amount of thiourea, volume ratio of diethylene glycol and deionized water, and reaction time affect the morphology and the photoelectrochemical properties of the InS films. The photocurrent density was achieved from the InS thin film prepared using 3 h, with a transient photocurrent of ca. 1.3 mA cm at the bias potential of +0.2 V vs. RHE.
- Subjects
METALLIC films; PHOTOELECTROCHEMISTRY; INDIUM compounds; POROUS materials; TIN oxides; DOPING agents (Chemistry); X-ray diffraction
- Publication
Journal of Solid State Electrochemistry, 2015, Vol 19, Issue 8, p2321
- ISSN
1432-8488
- Publication type
Article
- DOI
10.1007/s10008-015-2868-x