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- Title
Technological Conditions for Optimization of the Optoelectronic Parameters of the (As[sub 2]S[sub 3])[sub x](As[sub 2]Se[sub 3])[sub 1 – ][sub x] Glassy Semiconductor Films on a Polymer Roll Base.
- Authors
Ishimov, V. M.; Senokosov, É. A.; Dement’ev, I. V.; Goglidze, T. I.
- Abstract
We have experimentally studied dependence of the optoelectronic parameters (resistance, photosensitivity, drift mobility, and optical absorption edge) of thin (As[sub 2]S[sub 3])[sub x](As[sub 2]Se[sub 3])[sub 1 - x] glassy semiconductor films on the rate of their thermal deposition in vacuum onto a Lavsan (Dacron) roll base. Films obtained at the optimum deposition rates, ranging from 4 to 7 × 10[sup -3] µm/s, are characterized by greater values of the resistance, photosensitivity, and drift mobility, while the absorption edge approaches a value typical of a bulk glassy semiconductor. The influence of pores, formed in the volume of the deposit, on the physical properties of the films is discussed.
- Subjects
SEMICONDUCTOR films; OPTOELECTRONICS; LIGHT absorption
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 8, p699
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1505555