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- Title
Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence.
- Authors
Usikov, A. S.; Tret’yakov, V. V.; Lundin, V. V.; Zadiranov, Yu. M.; Pushnyı, B. V.; Konnikov, S. G.
- Abstract
A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of ∼ 1000°C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed surface. The cathodoluminescence pattern in the pyramids revealed a fine structure in which a region of donor-acceptor recombination could be identified. The formation of acceptor levels in this region was attributed to intrinsic structural defects in the GaN layers with unsaturated (broken) bonds. The presence of a donor-acceptor recombination line in mirrorsmooth epitaxial films may indicate that these films contain this type of structural defect.
- Subjects
EPITAXY; GALLIUM nitride; CATHODOLUMINESCENCE
- Publication
Technical Physics Letters, 1999, Vol 25, Issue 4, p253
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1262443