Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleFeatures of Pore Nucleation in p-Si during Its Electrochemical Etching.AuthorsAbramova, E. N.; Khort, A. M.; Yakovenko, A. G.; Syrov, Yu. V.; Tsygankov, V. N.; Slipchenko, E. A.; Shvets, V. I.AbstractFeatures of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.SubjectsPOROUS silicon; ETCHING; NUCLEATION; NANOSILICON; ANODIC oxidation of metals; CARBON foamsPublicationDoklady Chemistry, 2019, Vol 487, Issue 1, p165ISSN0012-5008Publication typeArticleDOI10.1134/S0012500819070012