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- Title
Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change.
- Authors
Feng, Tao; Chen, Gong; Han, Hainian; Qiao, Jie
- Abstract
The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectivity evolution obtained from dynamic images in combination with a theoretical Drude model and a Two-Temperature model provides new insights on material excitation and ablation process. For all fluences, the reflectivity increased to a temporary stable state after hundreds of femtoseconds. This behavior was predicted using a temperature-dependent refractive index in the Drude model. The increase in velocity of plasma generation with increasing fluence was theoretically predicted by the Two-Temperature model. Two ablation regimes at high fluences (>0.86 J/cm2) were identified through the measured transient reflectivity and ablation crater profile. The simulation shows that the fluence triggering the second ablation regime produces a boiling temperature (silicon, 2628 K).
- Subjects
FEMTOSECOND pulses; DRUDE theory; SOLID-state plasmas; TIME-resolved spectroscopy; PLASMA production; SILICON; FEMTOSECOND lasers; REFRACTIVE index
- Publication
Micromachines, 2022, Vol 13, Issue 1, p14
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi13010014