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Title
Model-Based GaN PA Design Basics: GaN Transistor S-Parameters, Linear Stability Analysis & Resistive Stabilization.
Abstract
The article discusses the importance of using modeling for basic S-parameter and stability analyses in the gallium nitride (GaN) PA design process. It introduces the use of models and resistive stabilization techniques to help avoid device instabilities that can affect nonlinear and linear simulations; and focus on a simple two-port stability analysis derived from linear S-parameter calculations.