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- Title
A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile MemoriesOne of us (B.H.P.) was supported by the Samsung Advanced Institute of Technology through the Basic Research Program of the Korea Science and Engineering Foundation, grant No. R01-2006-000-10883-0, a Korean Research Foundation Grant (KRF-2004-005-D00046), Seoul R&BD Program, a grant from the Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by MOST, and the National Research Program for the 0.1 Terabit Nonvolatile Memory Development, sponsored by the Korea Ministry of Commerce, Industry, and Energy.
- Authors
M.-J. Lee; S. Seo; D.-C. Kim; S.-E. Ahn; D. H. Seo; I.-K. Yoo; I.-G. Baek; D.-S. Kim; I.-S. Byun; S.-H. Kim; I.-R. Hwang; J.-S. Kim; S.-H. Jeon; B. H. Park
- Publication
Advanced Materials, 2007, Vol 19, Issue 1, p73
- ISSN
0935-9648
- Publication type
Article
- DOI
10.1002/adma.200601025