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- Title
Considerations on SiC MOSFET TSEP-based junction temperature measurement routines in practical use.
- Authors
Bąba, Sebastian; Palesa, Grzegorz; Wiśniewski, Jarosław; Mańka, Filip
- Abstract
Despite being discussed in multiple papers, practical implementation of TSEP-based junction temperature measurement method for SiC MOSFETs causes significant challenges, especially when used in real-life power converters. Challenges which are not usually considered in conference nor journal pares are related to applicability, repeatability and accuracy, especially in comparison to other well-established techniques. To fill this gap in the state of the art, various test routines for junction temperature estimation based on SiC MOSFET on-state channel resistance measurement were compared.
- Subjects
TEMPERATURE measurements; METAL oxide semiconductor field-effect transistors; STATISTICAL reliability
- Publication
Przeglad Elektrotechniczny, 2024, Vol 2024, Issue 5, p31
- ISSN
0033-2097
- Publication type
Article
- DOI
10.15199/48.2024.05.06