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- Title
Effect of Microwave Annealing on Silicon Dioxide/Silicon Carbide Structures.
- Authors
Bacherikov, Yu. Yu.; Konakova, R. V.; Kocherov, A. N.; Lytvyn, P. M.; Lytvyn, O. S.; Okhrimenko, O. B.; Svetlichnyi, A. M.
- Abstract
Abstract-The methods of atomic force microscopy and optical absorption spectroscopy are applied to study (the effect of microwave treatment on the properties of SiO)2(/SiC structures obtained by rapid thermal annealing) and conventional thermal oxidation in steam. From the variation of the sample optical density with total time of microwave treatment, it is concluded that the structures prepared by rapid thermal annealing are more stable against microwave radiation. It is shown that long-term microwave treatment flattens the oxide film surface at the nanolevel regardless of the method of silicon carbide oxidation.
- Subjects
ATOMIC force microscopy; SPECTRUM analysis
- Publication
Technical Physics, 2003, Vol 48, Issue 5, p598
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/1.1576474