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- Title
Performance evaluation of quantum well infrared phototransistor instrumentation through modeling.
- Authors
El-Tokhy, Mohamed S.; Mahmoud, Imbaby I.
- Abstract
This paper presents a theoretical analysis for the characteristics of quantum well infrared phototransistors (QWIPTs). A mathematical model describing this device is introduced under nonuniformity distribution of quantum wells (QWs). MATLAB environment is used to devise this model. Furthermore, block diagram models through the VisSim environment were used to describe the device characteristics. The developed models are used to investigate the behavior of the device with different values of performance parameters such as bias voltage, spacing between QWs, and temperature. These parameters are tuned to enhance the performance of these quantum phototransistors through the presented modeling. Moreover, the resultant performance characteristics and comparison between both QWIPTs and quantum wire infrared phototransistors are investigated. Also, the obtained results are validated against experimental published work and full agreements are obtained.
- Subjects
PHOTOTRANSISTORS; QUANTUM wells; QUANTUM well devices; PERFORMANCE of imaging systems; INFRARED equipment
- Publication
Optical Engineering, 2014, Vol 53, Issue 5, p1
- ISSN
0091-3286
- Publication type
Article
- DOI
10.1117/1.OE.53.5.054104