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- Title
Voltage shift of hysteresis loops of SrBi[sub 2] Ta[sub 2] O[sub 9] thin films under unipolar stress.
- Authors
Wu, D.; Li, A.D.; Ling, H.Q.; Yu, T.; Liu, Z.G.; Ming, N.B.
- Abstract
Abstract. Voltage shills of hysteresis loops of metalorganic decomposition (MOD)-derived SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) thin films, known as imprint, have been observed after exposing the thin-film capacitors to unipolar pulses. The voltage shift changes with cumulative total time at maximum voltage, following a relationship with no pulse-width dependence. The origin of the voltage shift is briefly discussed in terms of an internal bias field induced by injected electrons trapped at positive polarity. The pulse-measurement responses are greatly affected by the internal bias field, even though no imprint failure was observed up to 10[sup 10] unipolar pulses. The voltage shill and asymmetric properties can be removed easily by applying bipolar pulses of saturation amplitude.
- Subjects
HYSTERESIS; ORGANOMETALLIC compounds; STRONTIUM; BISMUTH; THIN films
- Publication
Applied Physics A: Materials Science & Processing, 2000, Vol 71, Issue 5, p597
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s003390000697