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- Title
A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact.
- Authors
Oh, Seung Yoon; Jeong, Yeong Je; Kang, Inho; Park, Ji-Hyeon; Yeom, Min Jae; Jeon, Dae-Woo; Yoo, Geonwook
- Abstract
Among various polymorphic phases of gallium oxide (Ga2O3), α-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices. In this work, we demonstrate α-Ga2O3 MOSFETs with hybrid Schottky drain (HSD) contact, comprising both Ohmic and Schottky electrode regions. In comparison with conventional Ohmic drain (OD) contact, a lower on-resistance (Ron) of 2.1 kΩ mm is achieved for variable channel lengths. Physics-based TCAD simulation is performed to validate the turn-on characteristics of the Schottky electrode region and the improved Ron. Electric-field analysis in the off-state is conducted for both the OD and HSD devices. Furthermore, a record breakdown voltage (BV) of 2.8 kV is achieved, which is superior to the 1.7 kV of the compared OD device. Our results show that the proposed HSD contact with a further optimized design can be a promising drain electrode scheme for α-Ga2O3 power MOSFETs.
- Subjects
BREAKDOWN voltage; ELECTRODES; METAL oxide semiconductor field-effect transistors; GALLIUM
- Publication
Micromachines, 2024, Vol 15, Issue 1, p133
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi15010133