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- Title
Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management.
- Authors
Zhao, Kechen; Zhao, Jiwen; Wei, Xiaoyun; Guan, Xiaoyu; Deng, Chaojun; Dai, Bing; Zhu, Jiaqi
- Abstract
Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and prominent local hot spots. Among bulk materials, diamond has the highest thermal conductivity (≥2000 W/mK), thereby prompting its application in high-power semiconductor devices for heat dissipation. In this paper, we report an innovative bottom-up Cu electroplating technique with a high-aspect-ratio (10:1) through-diamond vias (TDV). The TDV structure was fabricated by laser processing. The electrolyte wettability of the diamond and metallization surface was improved by Ar/O plasma treatment. Finally, a Cu-filled high-aspect-ratio TDV was realized based on the bottom-up Cu electroplating process at a current density of 0.3 ASD. The average single-via resistance was ≤50 mΩ, which demonstrates the promising application of the fabricated TDV in the thermal management of advanced packaging systems.
- Subjects
COPPER; HEAT storage; DIAMOND surfaces; OXYGEN plasmas; SEMICONDUCTOR devices; POWER density; DIAMONDS; DIAMOND crystals
- Publication
Micromachines, 2023, Vol 14, Issue 2, p290
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi14020290