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- Title
Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.
- Authors
Mezdrogina, M. M.; Krivolapchuk, V. V.; Feoktistov, N. A.; Danilovskiĭ, É. Yu.; Kuzmin, R. V.; Razumov, S. V.; Kukushkin, S. A.; Osipov, A. V.
- Abstract
Luminescence intensity of heterostructures based on n-ZnO/ p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) is higher by more than an order of magnitude than the corresponding intensity of separate n-ZnO, p-GaN:(Er + Zn), and AlGaN:(Er + Zn) layers. Most likely, this phenomenon is due to the effective tunneling recombination of charge carriers caused by a decrease in the concentration of the nonradiative recombination centers located between the n-ZnO/ p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) layers.
- Subjects
LUMINESCENCE; HETEROSTRUCTURES; PHOTOLUMINESCENCE; SPECTRUM analysis; QUANTUM tunneling
- Publication
Semiconductors, 2008, Vol 42, Issue 7, p766
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782608070038