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- Title
Relaxation of the Excited States of Arsenic in Strained Germanium.
- Authors
Kovalevsky, K. A.; Choporova, Yu. Yu.; Zhukavin, R. Kh.; Abrosimov, N. V.; Pavlov, S. G.; Hübers, H.-W.; Tsyplenkov, V. V.; Kukotenko, V. D.; Knyazev, B. A.; Shastin, V. N.
- Abstract
The relaxation times of the lower p states of the arsenic donor in a germanium crystal strained along the [111] crystallographic direction are studied. Measurements are performed by the pump–probe method, using free-electron laser radiation. The states are excited from the 1s (Γ1) ground state. The experimentally measured decay times of the 2p0, 3p0, and 2p± states are 1.3, no more than 0.2, and 0.4 ns, respectively. It is shown that the relatively high relaxation rate of the 2p± state is defined by the interaction with intravalley TA photons.
- Subjects
EXCITED states; GERMANIUM; LASER beams; ARSENIC; THULIUM; PHOTONS
- Publication
Semiconductors, 2020, Vol 54, Issue 10, p1347
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782620100188