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- Title
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers.
- Authors
Prokhorov, D. S.; Shengurov, V. G.; Denisov, S. A.; Filatov, D. O.; Zdoroveishev, A. V.; Chalkov, V. Yu.; Zaitsev, A. V.; Ved', M. V.; Dorokhin, M. V.; Baidakova, N. A.
- Abstract
The photoluminescence spectra of epitaxial n+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 × 1020 cm–3 from a source based on thermally decomposed GaP. The effects of the doping level and rapid thermal annealing of n+-Ge:P layers on the photoluminescence spectra are studied. It is demonstrated that the epitaxial n+-Ge:P/Si(001) layers grown by hot-wire chemical vapor deposition are promising for application as active regions of light-emitting optoelectronic devices operating in the near-infrared spectral region.
- Subjects
CHEMICAL vapor deposition; RAPID thermal processing; PHOTOLUMINESCENCE; OPTOELECTRONIC devices; OPTOELECTRONICS; EPITAXIAL layers
- Publication
Semiconductors, 2019, Vol 53, Issue 9, p1262
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782619090161