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- Title
Effects of post-deposition annealing on BaTiO<sub>3</sub>/4H-SiC MOS capacitors using aerosol deposition method.
- Authors
Choi, Ji-Soo; Lee, Hyun-Woo; Lee, Tae-Hee; Park, Se-Rim; Chung, Seung-Hwan; Cho, Young-Hun; Lee, Geon-Hee; Schweitz, Michael A.; Park, Chulhwan; Shin, Weon Ho; Oh, Jong-Min; Koo, Sang-Mo
- Abstract
High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to enhance SiC-based device performance. In our experiments, the MOS capacitors with a high-k barium titanate (BaTiO3) insulating layer were fabricated using the aerosol deposition (AD) method, and post-deposition annealed in O2 atmospheres. We examined the effects of post-deposition annealing on the BaTiO3 films and their impact on the surface and electrical characteristics of MOS capacitors. The crystallinity and surface morphologies of the BaTiO3 films were analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy. We conducted the electrical analysis through current–voltage and capacitance–voltage (C–V) measurements. The post-deposition annealing process effectively reduced the gate leakage current of BaTiO3/4H-SiC and elevated the rectification ratio from 9.12 × 108 to 1.61 × 109. C–V characteristics were measured at 1 MHz to investigate the oxide defect charges inside the MOS capacitors. Near-interface trap density ( N it ) decreased from 9.10 × 1011 to 5.53 × 1011 cm−2 due to post-annealing, which diminished flat band voltage hysteresis. Fixed oxide charge density ( Q f ) also diminished from 4.00 × 1011 to 3.58 × 1011 cm−2, and the oxygen vacancies were compensated by the oxygen atoms introduced from the O2 during the post-deposition annealing. Our findings suggest that the post-deposition annealed process significantly influences surface and electrical properties during BaTiO3 thin film deposition using AD.
- Subjects
METAL oxide semiconductor capacitors; CAPACITORS; THIN film deposition; BARIUM titanate; ATOMIC force microscopy; AEROSOLS; BREAKDOWN voltage
- Publication
Applied Physics A: Materials Science & Processing, 2024, Vol 130, Issue 3, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-024-07285-1