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- Title
Barrier inhomogeneity and leakage current transport mechanism in vertical Pt/Gd<sub>2</sub>O<sub>3</sub>/GaN Schottky diodes.
- Authors
Kim, Hogyoung; Lee, Ha Young; Choi, Byung Joon
- Abstract
Vertical Pt Schottky contacts to bulk GaN single crystal with an ultrathin Gd2O3 interlayer grown by atomic layer deposition were electrically characterized using temperature dependent current–voltage (I–V–T) and capacitance–voltage (C–V) measurements. The forward I–V characteristics of the Schottky diodes revealed a temperature dependence of barrier height, and were explained by thermionic emission involving barrier inhomogeneity. Based on the thermally activated process, the dominant transport mechanism for reverse leakage current was determined to be Poole–Frenkel emission with the trap energy of 0.78 eV. The flat-band barrier height estimated from C–V method was 1.33 eV. The analysis on C–V data showed very low interface state density, indicating that Gd2O3 is a promising passivation layer in vertical GaN devices.
- Subjects
STRAY currents; SCHOTTKY barrier diodes; ATOMIC layer deposition; THERMIONIC emission; GALLIUM nitride
- Publication
Applied Physics A: Materials Science & Processing, 2021, Vol 127, Issue 9, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-021-04799-w