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- Title
Photoluminescence on cerium-doped ZnO nanorods produced under sequential atomic layer deposition-hydrothermal processes.
- Authors
Cervantes-López, J.; Rangel, R.; Espino, J.; Martínez, E.; García-Gutiérrez, R.; Bartolo-Pérez, P.; Alvarado-Gil, J.; Contreras, O.
- Abstract
Doped and undoped ZnO nanorod arrays were produced combining atomic layer deposition and hydrothermal processes. First, a ZnO layer with preferential orientation normal to the c-axis was grown on the substrate by means of the decomposition of diethylzinc; subsequently, the nanorod arrays were produced through solvothermal process using a solution of Zn(NO) as precursor. Doped ZnO nanorods were produced using Ce(CHO)·HO as dopant agent precursor. Undoped and Ce-doped ZnO nanorod arrays showed high-intensity photoluminescence. The doping concentration of x = 0.04 (ZnCeO) displayed the highest photoluminescence. Undoped ZnO showed an intense UV peak centered at 382 nm with a narrow full wide half maximum of 33 nm. Ce-doped ZnO PL spectra contain three bands, one signal in the UV region centered at 382 nm, other centered at 467 nm in the near-green region and other one emission centered at 560 nm. The results herein exposed demonstrate the capability to produce high-quality ZnO and ZnCeO films.
- Subjects
NANORODS; ZINC oxide; CERIUM; PHOTOLUMINESCENCE; ATOMIC layer deposition; HYDROTHERMAL synthesis
- Publication
Applied Physics A: Materials Science & Processing, 2017, Vol 123, Issue 1, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-016-0722-3