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- Title
Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode.
- Authors
Huang, M.-F.; Tsai, M.-L.; Shin, J.-Y.; Sun, Y.-L.; Yang, R.-M.; Kuo, Y.-K.
- Abstract
Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1-x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29°/9° for this optimized AlGaInP laser diode.
- Subjects
DIODES; LASERS; WAVEGUIDES; ELECTRIC waves; QUANTUM wells; MATERIALS science
- Publication
Applied Physics A: Materials Science & Processing, 2005, Vol 81, Issue 7, p1369
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-005-3258-5