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- Title
Effects of annealing temperature on structure and electrical properties of (Na, K)NbO thin films grown by RF magnetron sputtering deposition.
- Authors
Huang, Jiewen; Liu, Jinsong; Li, Ziquan; Zhu, Kongjun; Wang, Bijun; Gu, Qinlin; Feng, Bing; Qiu, Jinhao
- Abstract
In this study, lead-free (Na, K)NbO films were successfully deposited by RF magnetron sputtering and subsequent annealing treatment, in which a KNN atmosphere was projected to prevent the alkali metal volatilization. Effects of annealing temperatures on structure and electrical properties of the KNN thin films were investigated systematically. The results show that, with the temperature increasing, the KNN films started crystallization accompanying with volatilization of alkaline elements as well as phase transition. The particle size and surface quality of the film closely depended on annealing temperature and atmosphere. The (100) preferred orientation, large grain size, dense morphology, and annealing atmosphere all benefited the electrical properties of the KNN films. Notablely, the KNN films deposited at 200 °C and subsequent annealed at 650 °C showed a well polarization of 2 P = 20.8 μC/cm and coercive field 2 E of 200 kV/cm.
- Subjects
ANNEALING of metals; NIOBIUM oxide; MAGNETRON sputtering; ALKALI metals spectra; PHASE transitions; ALKALINE earth metals
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 1, p899
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3832-3